Publikacja
Eksport metadanych
Zapisz ten adres...
Opis publikacji
Journal of Telecommunications and Information Technology, 2007, nr 3
-
Struktura publikacji:
-
-
2007, nr 3, JTIT - artykuły
-
Bieniek, Tomasz; Beck, Romuald B.; Jakubowski, Andrzej; Głuszko, Grzegorz; Konarski, Piotr; Ćwil, Michał, Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Bieniek, Tomasz; Beck, Romuald B.; Jakubowski, Andrzej; Konarski, Piotr; Ćwil, Michał; Hoffmann, Patrick; Schmeißer, Dieter, Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes, Journal of Telecommunications and ...
-
Mroczyński, Robert; Beck, Romuald B.; Jakubowski, Andrzej; Ćwil, Michał; Konarski, Piotr; Hoffmann, Patrick; Schmeißer, Dieter, The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Mroczyński, Robert; Bieniek, Tomasz; Beck, Romuald B.; Ćwil, Michał; Konarski, Piotr; Hoffmann, Patrick; Schmeißer, Dieter, Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation, Journal of Telecommunications and Infor...
-
Kalisz, Małgorzata; Beck, Romuald B.; Barcz, Adam; Ćwil, Michał, The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Grabowski, Jarosław; Beck, Romuald B., Oxidation kinetic sof silicon strained by silicon germanium, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Firek, Piotr; Werbowy, Aleksander; Szmidt, Jan; Kwietniewski, Norbert, Influence of the deposition process parameters on electronic properties of BN films obtained by means of RF PACVD, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Gronau, Ryszard; Szmidt, Jan; Czerwosz, Elżbieta, Correlation between electric parameters of carbon layers and their capacity for field emission, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Jarzyńska, Dagmara; Znamirowski, Zbigniew; Cłapa, Marian; Staryga, Elżbieta, Investigations of electron emission from DLC thin films deposited by means of RF PCVD at various self-bias voltages, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Rzodkiewicz, Witold; Panas, Andrzej, Ellipsometric spectroscopy studies of compaction and decompaction of Si-SiO2 systems, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Piskorski, Krzysztof; Przewłocki, Henryk M., Investigation of barrier height distributions over the gate area of Al-SiO2-Si structures, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Tomaszewski, Daniel; Yang, Chia-Ming; Jaroszewicz, Bohdan; Zaborowski, Michał; Grabiec, Piotr; Pijanowska, Dorota G., Electrical characterization of ISFETs, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Głuszko, Grzegorz; Łukasiak, Lidia; Kilchytska, Valeriya; Chung, Tsung Ming; Olbrechts, Benoit; Flandre, Denis, Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Głuszko, Grzegorz; Szostak, Sławomir; Gottlob, Heinrich; Lemme, Max; Łukasiak, Lidia, Characterization of SOI MOSFETs by means of charge-pumping, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Głuszko, Grzegorz; Łukasiak, Lidia; Gili, Enrico; Ashburn, Peter, Charge-pumping characterization of FILOX vertical MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Iwanowicz, Marcin; Pióro, Zbigniew; Łukasiak, Lidia; Jakubowski, Andrzej, Arbitrary waveform generator for charge-pumping, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Walczak, Jakub; Majkusiak, Bogdan, Electron mobility and drain current in strained-Si MOSFET, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Zaręba, Agnieszka; Łukasiak, Lidia; Jakubowski, Andrzej, Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Stęszewski, Jędrzej; Jakubowski, Andrzej; Korwin-Pawlowski, Michael L., Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristic ssimulated with Silvaco Atlas and Crosslight Apsys, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Langer, Małgorzata, Monte Carlo method used for a prognosis of selected technological parameters, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Rakowski, Michał; Pleskacz, Witold A., The influence of yield model parameters on the probability of defect occurrence, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Tosik, Grzegorz; Lisik, Zbigniew; Gaffiot, Frederic, Optical interconnections in future VLSI systems, Journal of Telecommunications and Information Technology, 2007, nr 3
-
Kaźmierczak, Andrzej; Drouard, Emmanuel; Briere, Matthieu; Rojo-Romeo, Pedro; Letartre, Xavier; O’Connor, Ian; Gaffiot, Frederic; , Optimization of an integrated optical crossbar in SOI technology for optical networks on chip, Journal of Telecommunications and Information Technology, 2007, nr 3
