Biblioteka Cyfrowa
Opis wydania
Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology, Journal of Telecommunications and Information Technology, 2007, nr 3
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Opis :
The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.
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