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Opis publikacji

Journal of Telecommunications and Information Technology, 2007, nr 2

Struktura publikacji:
  • 2007, nr 2, JTIT - artykuły
    • Balestra, Francis, SOI nanodevices and materials for CMOS ULSI, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Ohata, Akiko; Ritzenthaler, Romain; Faynot, Olivier; Cristoloveanu, Sorin, Special size effects in advanced single-gate and multiple-gate SOI transistors, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Östling, Mikael; Malm, Bengt Gunnar; Haartman von, Martin; Hallstedt, Julius; Zhang, Zhen; Hellström, Per-Erik; Zhang, Shili, Challenges for 10 nm MOSFET process integration, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Hall, Stephen; Buiu, Octavian; Mitrovic, Ivona Z.; Lu, Yi; Davey, William M., Review and perspective of high-k dielectrics on silicon, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Ruzyllo, Jerzy: Semiconductor cleaning technology for next generation material systems. Journal of Telecommunications and Information Technology, 2007, nr 2
    • Bakowski, Mietek; Schöner, Adolf; Ericsson, Per; Strömberg, Helena; Nagasawa, Hiroyuki; Abe, Masayuki, Development of 3C-SiC MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Ashburn, Peter; Mubarek El, Huda A. W., Properties and benefits of fluorine in silicon and silicon-germanium devices, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Thomas, Stephen M.; Prest, Martin J.; Fulgoni, Dominic J. F.; Bacon, Adam R.; Grasby, Tim J. ; Leadley, David R; Parker, Evan H. C.; Whall, Terence E., Low frequency noise in Si and Si/SiGe/Si PMOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Lederer, Dimitri; Raskin, Jean-Pierre, On-wafer wideband characterization: a powerful tool for improving the IC technologies, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Zaunert, Florian; Endres, Ralf; Stefanov, Yordan; Schwalke, Udo, Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Engström, Olof; Gutt, Tomasz; Przewłocki, Henryk M., Energy concepts involved in MOS characterization, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Grasser, Tibor; Selberherr, Siegfried, Modeling of negative bias temperature instability, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Islam, Imdadul; Das, Jugal Krishna; Hossain, Siddique, Modeling of voice data integrated traffic in 3G mobile cellular network, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Szustakowski, Mieczysław; Pałka, Norbert; Grabiec, Waldemar, Simple method for characterization of photonic crystal fibers, Journal of Telecommunications and Information Technology, 2007, nr 2
    • Rados, Ivan, 2007, nr 2, Availability analysis and comparison of different WDM systems, Journal of Telecommunications and Information Technology, 2007, nr 2