Publikacja
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Opis publikacji
Journal of Telecommunications and Information Technology, 2001, nr 1
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Struktura publikacji:
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2001, nr 1, JTIT - artykuły
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Whall, Terrence E.; Parker, Evan H. C., SiGe field effect transistors – performance and applications, Journal of Telecommunications and Information Technology, 2001, nr 1
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Balestra, Francis, Reliability of deep submicron MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1
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Nazarov, Alexei N.; Kilchytska, V. I.; Vovk, Ja. N.; Colinge, J. P., High-temperature instability processes in SOI structures and MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1
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Beck, Romuald B.; Jakubowski, Andrzej; Łukasiak, Lidia; Korwin-Pawłowski, Michał, Challenges in ultrathin oxide layers formation, Journal of Telecommunications and Information Technology, 2001, nr 1
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Barth, Wolfgang; Dębski, Tomasz; Barth, Wolfgang; Rangelow, Ivo W.; Domański, Krzysztof; Tomaszewski, Daniel; Grabiec, Piotr: Piezoresistive sensors for atomic force microscopy – numerical simulations by means of virtual wafer fab, Journal of Telecommunications and Information Technology, 2001, nr 1
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Druzhinin, Anatoly; Lavitska, Elena; Maryamova, Inna; Kogut, Igor; Khoverko, Yuri, On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors, Journal of Telecommunications and Information Technology, 2001, nr 1
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Pankov, Yury; Druzhinin, Anatoly, Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures, Journal of Telecommunications and Information Technology, 2001, nr 1
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Barth, Wolfgang; Dębski, Tomasz; Rangelow, Ivo W., Fabrication and properties of the field emission array with self-alignment gate electrode, Journal of Telecommunications and Information Technology, 2001, nr 1
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Domański, Krzysztof; Grabiec, Piotr; Gotszalk, Teodor; Beck, Romuald B.; Dębski, Tomasz; Rangelow, Ivo W., Adsorption properties of porous silicon, Journal of Telecommunications and Information Technology, 2001, nr 1
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Tomaszewski, Daniel; Łukasiak, Lidia; Gibki, Jan; Jakubowski, Andrzej, An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1
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Tomaszewski, Daniel; Łukasiak, Lidia; Jakubowski, Andrzej; Domański, Krzysztof, A model of partially-depleted SOI MOSFETs in the subthreshold range, Journal of Telecommunications and Information Technology, 2001, nr 1
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Janik, Tomasz; Jakubowski, Andrzej; Majkusiak, Bogdan; Korwin-Pawłowski, Michał, Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics, Journal of Telecommunications and Information Technology, 2001, nr 1
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Szmidt, Jan; Werbowy, Aleksander; Dusiński, Emil; Zdunek, Krzysztof, Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film, Journal of Telecommunications and Information Technology, 2001, nr 1
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Pietruszko, Stanisław M.; Kostana, Marek, Metastability problems in amorphous silicon, Journal of Telecommunications and Information Technology, 2001, nr 1
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Mroczkowski, Piotr, block cipher, Rijndael, Altera FPGAImplementation of the block cipher Rijndael using Altera FPGA, Journal of Telecommunications and Information Technology, 2001, nr 1
