Biblioteka Cyfrowa
Opis wydania
High-temperature instability processes in SOI structures and MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1
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Opis :
The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI structures are presented. The studies are focused mainly on electrical discharging processes in the BOX at high temperature and its link with new instability phenomena such as high-temperature kink effects in SOI MOSFETs.
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