Biblioteka Cyfrowa
Opis wydania
An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1
-
-
Opis :
An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the socalled „pinch-off” region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.
Zaproponuj słowa kluczowe, które Twoim zdaniem dobrze opisują to wydanie
Po zalogowaniu będziesz mógł zaproponować nowe słowa kluczowe dla tego wydania. Zaloguj się!