Biblioteka Cyfrowa
Opis wydania
Metastability problems in amorphous silicon, Journal of Telecommunications and Information Technology, 2001, nr 1
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Opis :
The results of study of the influence of boron and phosphorous doping and hydrogen content on transport properties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metastability is a barrier for wide application of a-Si such solar cells. In this paper we report our studies on the effect of thermally induced metastability in LPCVD a-Si as a function of implanted boron and phosphorous concentration. We have investigated films unhydrogenated and hydrogenated by ion implantation. The results are qualitatively agreed with bond breaking model.
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