Biblioteka Cyfrowa
Opis wydania
Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures, Journal of Telecommunications and Information Technology, 2001, nr 1
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Opis :
A physical model of grain boundary influence on the piezoresistive effect of p-type conductivity of polysilicon layers in SOI-structures is developed. Software calculating piezoresistive properties of boron-doped p-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine-grained non-recrystallized SOI-structures doped with boron up to 3∙10^19cm^-3 only.
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