Biblioteka Cyfrowa
Opis wydania
Gate dielectrics: process integration issues and electrical properties, Journal of Telecommunications and Information Technology, 2005, nr 1
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Opis :
In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n+ poly-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed.
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