Biblioteka Cyfrowa
Opis wydania
Silicon microelectronics: where we have come from and where we are heading, Journal of Telecommunications and Information Technology, 2004, nr 1
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Temat i słowa kluczowe :
MOSFET
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scaling
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SiGe
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SOI
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Opis :
The paper briefly presents the history of microelectronics and the limitations of its further progress, as well as possible solutions. The discussion includes the consequences of the reduction of gate-stack capacitance and difficulties associated with supply-voltage scaling, minimization of parasitic resistance, increased channel doping and small size. Novel device architectures (e.g. SON, double-gate transistor) and the advantages of silicon-germanium are considered, too.
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