Biblioteka Cyfrowa
Opis wydania
Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator, Journal of Telecommunications and Information Technology, 2009, nr 4
-
-
Opis :
The properties of barium titanate (BaTiO3, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO3 thin films (containing La2O3 admixture) acting as gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2% wt.) target. In the paper transfer and output I−V, transconductance and output conductance characteristics of the obtained transistors are presented and discussed. Basic parameters of these devices, such as threshold voltage (VTH) are determined and discussed.
Zaproponuj słowa kluczowe, które Twoim zdaniem dobrze opisują to wydanie
Po zalogowaniu będziesz mógł zaproponować nowe słowa kluczowe dla tego wydania. Zaloguj się!