Biblioteka Cyfrowa
Opis wydania
Prospects and Development of Vertical Normally-off JFETs in SiC, Journal of Telecommunications and Information Technology, 2009, nr 4
-
-
Opis :
This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations. The performance of analyzed concepts is compared in terms of blocking voltage, specific on-state resistance, maximum output current density and switching performance in the temperature range from 25°C to 250°C. The main objective of the analysis is to ascertain consequences of different design and technology options for the total losses and high temperature performance of the devices.
Zaproponuj słowa kluczowe, które Twoim zdaniem dobrze opisują to wydanie
Po zalogowaniu będziesz mógł zaproponować nowe słowa kluczowe dla tego wydania. Zaloguj się!